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A Si p-n-p BJT with the doping concentration of N_A,E = 10^18 cm^-3, N_D,B = 10^17 cm^-3,
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A Si p-n-p BJT with the doping concentration of N_A,E = 10^18 cm^-3, N_D,B = 10^17 cm^-3, and the base region width of W = 0.2 µm. The carrier lifetimes are ζ_n = ζ_p = 10ns. The electron and hole mobility µ_n and µ_p are 1000 cm^2/V-S and 300 cm^2/V-S, respectively. The widths of the emitter and collector regions are much larger than the minority carrier diffusion lengths. The BJT is maintained under equilibrium conditions at room temperature (kT = 0.026ev)
(a) Calculate the Emitter Efficiency (?) for this BJT
(b) What is the Base Transport Ratio (B)
(c)Calculate the Common Emitter Gain (?)
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[Solved] A Si p-n-p BJT with the doping concentration of N_A,E = 10^18 cm^-3, N_D,B = 10^17 cm^-3,
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- Submitted On 16 May, 2018 06:13:36
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A Si p-n-p BJT with the doping concentration of N_A,E = 10^18 cm^-3, N_D,B = 10^17 cm^-3, and the base region width of W = 0.2 µm. The carrier lifetim...
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A Si p-n-p BJT with the doping concentration of N_A,E = 10^18 cm^-3, N_D,B = 10^17 cm^-3,
A Si p-n-p BJT with the doping concentration of N_A,E = 10^18 cm^-3, N_D,B = 10^17 cm^-3, and the base region width of W = 0.2 µm. The carrier lifetimes are ζ_n = ζ_p = 10ns. The electron and hole mobility µ_n and µ_p ar...
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